NOVEL PROCESS FOR RELIABLE ULTRATHIN TUNNEL DIELECTRICS

被引：17

作者：

HAO, MY ^{[1
]}

MAITI, B ^{[1
]}

LEE, JC ^{[1
]}

机构：

[1] MOTOROLA INC,ADV PROD RES & DEV LABS,AUSTIN,TX 78721

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 16期

关键词：

D O I：

10.1063/1.111696

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new process technique, referred to as the ''oxidized-nitrided silicon (ONS),'' was developed for producing ultrathin (less-than-or-equal-to 50 angstrom) dielectrics. Metal-oxide-semiconductor capacitors were fabricated using this novel process to investigate the dielectric quality. It was found that devices with ONS dielectrics exhibit reduced charge trapping and improved interface-state generation characteristics. The stress-induced leakage current, which is one of the major concerns for ultrathin dielectrics, was also suppressed by employing the ONS dielectrics. In addition, precise thickness control can be easily achieved by the ONS process even down to the ultrathin regime. The results suggest that this novel ONS process can synthesize reliable tunnel dielectrics suitable for memory applications.

引用

页码：2102 / 2104

页数：3

共 8 条

[1]

GHANDHI SK, 1983, VLSI FABRICATION PRI, P388

[2]

MOAZZAMI R, 1992, 1992 INT EL DEV M US, P139

[3] THERMAL NITRIDATION OF SILICON IN AMMONIA GAS - COMPOSITION AND OXIDATION RESISTANCE OF THE RESULTING FILMS [J].