DUAL ION-IMPLANTATION IN ZNTE (O+ZN) INTERACTION BETWEEN SOLUBILITY AND STOICHIOMETRY

被引：15

作者：

KATIRCIOGLU, B

PAUTRAT, JL

BENSAHEL, D

MAGNEA, N

机构：

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1978年 / 37卷 / 3-4期

关键词：

D O I：

10.1080/00337577808233188

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：183 / 191

页数：9

共 22 条

[1] EFFECT OF DUAL IMPLANTS INTO GAAS [J].

AMBRIDGE, T ;

HECKINGBOTTOM, R ;

BELL, EC ;

SEALY, BJ ;

STEPHENS, KG ;

SURRIDGE, RK .

ELECTRONICS LETTERS, 1975, 11 (15) :314-315

[2]

BENSAHEL D, UNPUBLISHED

[3] FLUORESCENT DECAY TIMES OF EXCITONS BOUND TO ISOELECTRONIC TRAPS IN GAP AND ZNTE [J].

CUTHBERT, JD ;

THOMAS, DG .

PHYSICAL REVIEW, 1967, 154 (03) :763-&

[4]

DEAN PB, UNPUBLISHED

[5] MIRROR ABSORPTION AND FLUORESCENCE IN ZNTE [J].

DIETZ, RE ;

HOPFIELD, JJ ;

THOMAS, DG .

PHYSICAL REVIEW LETTERS, 1962, 8 (10) :391-&

[6]

ELAKKAD F, COMMUNICATION

[7]

GAMO K, 1975, ION IMPLANTATION SEM

[8]

GAVRILOV A, 1975, SOVIET PHYS SEMICOND, V8, P11

[9]

Heckingbottom R., 1973, RADIAT EFF, V17, P31

[10] ISOELECTRONIC DONORS AND ACCEPTORS [J].

HOPFIELD, JJ ;

THOMAS, DG ;

LYNCH, RT .

PHYSICAL REVIEW LETTERS, 1966, 17 (06) :312-&

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