TANTALUM NITRIDE AS A DIFFUSION BARRIER BETWEEN PD2SI OR COSI2 AND ALUMINUM

[1] CHANG CC, 1978, CHARACTERIZATION SOL, P509

[2] Chu W. K., 1978, BACKSCATTERING SPECT

[3] FAROOQ MS, 1987, J ELECTROCHEM SOC, V134, pC265

[4] FAROOQ MS, 1988, THESIS RENSSELAER PO

[5] FAROOQ MS, 1988, TUNGSTEN OTHER REFRA, P357

[6] CHEMICAL BONDING AND SCHOTTKY-BARRIER FORMATION AT TRANSITION-METAL SILICON INTERFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1983, 1 (02): : 745 - 756

[7] Lepselter M. P., 1969, Ohmic contacts to semiconductors, P159

[8] MURARKA SP, 1983, SILICIDES VLSI APPLI

[9] Tu K. N., 1984, Materials Science Forum, V1, P133, DOI 10.4028/www.scientific.net/MSF.1.133

[10] ALUMINUM-SILICIDE REACTIONS .2. SCHOTTKY-BARRIER HEIGHT [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (11) : 6923 - 6926

[1] CHANG CC, 1978, CHARACTERIZATION SOL, P509

[2] Chu W. K., 1978, BACKSCATTERING SPECT

[3] FAROOQ MS, 1987, J ELECTROCHEM SOC, V134, pC265

[4] FAROOQ MS, 1988, THESIS RENSSELAER PO

[5] FAROOQ MS, 1988, TUNGSTEN OTHER REFRA, P357

[6] CHEMICAL BONDING AND SCHOTTKY-BARRIER FORMATION AT TRANSITION-METAL SILICON INTERFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1983, 1 (02): : 745 - 756

[7] Lepselter M. P., 1969, Ohmic contacts to semiconductors, P159

[8] MURARKA SP, 1983, SILICIDES VLSI APPLI

[9] Tu K. N., 1984, Materials Science Forum, V1, P133, DOI 10.4028/www.scientific.net/MSF.1.133

[10] ALUMINUM-SILICIDE REACTIONS .2. SCHOTTKY-BARRIER HEIGHT [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (11) : 6923 - 6926