SECONDARY IONIZATION AND ITS POSSIBLE BEARING ON PERFORMANCE OF A SOLAR CELL

被引：9

作者：

DEB, S

SAHA, H

机构：

来源：

关键词：

D O I：

10.1016/0038-1101(72)90135-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1389 / &

共 7 条

[1]

ALTMAN M, 1969, ELEMENTS SOLID STATE, pCH4

[2] LOW-TEMPERATURE NON-OHMIC ELECTRON TRANSPORT IN GAAS [J].

CRANDALL, RS .

PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (02) :730-&

[3]

KONDRATYEV KY, 1969, RADIATION ATMOSPHERE, P245

[4]

LIPNIK AA, 1969, SOV PHYS SEMICOND+, V3, P423

[5] PROBLEMS RELATED TO P-N JUNCTIONS IN SILICON [J].

SHOCKLEY, W .

[6] ELECTRON IMPACT IONIZATION IN SEMICONDUCTORS [J].

TAUC, J .

[7] ON PHOTO-IONIZATION BY FAST ELECTRONS IN GERMANIUM AND SILICON [J].

VAVILOV, VS .