50 GHZ GALLIUM-ARSENIDE IMPATT OSCILLATOR

被引:8
作者
GIBBONS, G
GOKGOR, HS
WICKENS, PR
PURCELL, JJ
机构
关键词
D O I
10.1049/el:19720374
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:513 / &
相关论文
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[1]   A SINGLE-TUNED OSCILLATOR FOR IMPATT CHARACTERIZATIONS [J].
MAGALHAE.FM ;
KUROKAWA, K .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (05) :831-&
[2]   DOUBLE-DRIFT-REGION ION-IMPLANTED MILLIMETER-WAVE IMPATT DIODES [J].
SEIDEL, TE ;
DAVIS, RE ;
IGLESIAS, DE .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (08) :1222-+