An electronically tunable monolithic flared amplifier master oscillator power amplifier structure is described. This device is composed of a DBR laser tunable by free-carrier injection integrated with a flared amplifier, and generates 1-W CW of near-diffraction-limited, single mode power at lambda approximately 980 nm, while allowing wavelength tuning over a 6-angstrom range using a tuning current of 30 mA. This device is useful in applications requiring high power, high beam quality, and precise wavelength control simultaneously such as in frequency doubling.