A VIRTUAL SELF-ALIGNED PROCESS FOR N-CHANNEL INP IGFETS (OR MISFETS)

被引：11

作者：

TSENG, WF

BARK, ML

DIETRICH, HB

CHRISTOU, A

HENRY, RL

SCHMIDT, WA

SAKS, NS

机构：

来源：

ELECTRON DEVICE LETTERS | 1981年 / 2卷 / 11期

关键词：

D O I：

10.1109/EDL.1981.25441

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：299 / 301

页数：3

共 17 条

[1] COMPOSITION, CHEMICAL BONDING, AND CONTAMINATION OF LOW-TEMPERATURE SIOXNY INSULATING FILMS [J].

ANDERSON, GW ;

SCHMIDT, WA ;

COMAS, J .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (03) :424-430

[2]

FRITZSCHE D, 1980, I PHYS C SER, V50, pCH4

[3]

HENRY RL, 1977, ST LOUIS I PHYS C B, V33, P28

[4] PROPERTIES OF GAAS-AL2O3 AND INP-AL2O3 INTERFACES AND THE FABRICATION OF MIS FIELD-EFFECT TRANSISTORS [J].

KAMIMURA, K ;

SAKAI, Y .

THIN SOLID FILMS, 1979, 56 (1-2) :215-223

[5]

Kawakami T., 1980, International Electron Devices Meeting. Technical Digest, P445

[6]

KAWAKAMI T, 1979, ELECTRON LETT, V15, P763

[7]

KINELL DK, 1981, 39TH DEV RES C SANT

[8]

LEE RN, 1977, MATER RES BULL, V12, P651, DOI 10.1016/0025-5408(77)90075-7

[9] N-CHANNEL INVERSION-MODE INP MISFET [J].

LILE, DL ;

COLLINS, DA ;

MEINERS, LG ;

MESSICK, L .

ELECTRONICS LETTERS, 1978, 14 (20) :657-659

[10] DIELECTRIC AND INTERFACIAL CHARACTERISTICS OF MIS STRUCTURES ON INP AND GAAS [J].

LILE, DL ;

COLLINS, DA .

THIN SOLID FILMS, 1979, 56 (1-2) :225-234

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