OHMIC CONTACTS AND DOPING OF CDTE

被引:70
作者
FAHRENBRUCH, AL
机构
[1] Stanford Univ, Stanford, CA, USA, Stanford Univ, Stanford, CA, USA
来源
SOLAR CELLS | 1987年 / 21卷
关键词
CRYSTALS - ELECTRIC CONTACTS; OHMIC;
D O I
10.1016/0379-6787(87)90138-4
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Fabrication of ohmic contacts to CdTe is strongly dependent on obtaining sufficient carrier density in the material. Acceptor levels greater than 10**1**7 cm** minus **3 are easily obtained in single-crystal CdTe but are difficult to obtain for polycrystalline material. Consequently, contacts with a specific resistivity of about 0. 2 OMEGA cm**2, which is adequate for efficient solar cells, can be obtained readily with single crystals but not with polycrystalline CdTe. This paper reviews the current art and science of contacting p-CdTe and its relation to doping the material.
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页码:399 / 412
页数:14
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