STUDY OF THERMALLY OXIDIZED YTTRIUM FILMS ON SILICON

[11] SAYER M, 1970, THIN SOLID FILMS, V6, P261

[12] ELECTRICAL CHARACTERISTICS OF THE RF MAGNETRON-SPUTTERED TANTALUM PENTOXIDE-SILICON INTERFACE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (11) : 2621 - 2625

[13] EFFECTS OF SURFACE OXIDE ON LEAKAGE CURRENT OF MAGNETRON-SPUTTERED TA2O5 ON SI [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (12) : 3054 - 3055

[14] SEYBOLT AU, 1953, PROCEDURES EXPT META, P176

[15] SZE SM, 1981, PHYSICS SEMICONDUCTO

[16] Tsutsumi T., 1970, Toshiba Review (International Edition), P52

[17] DIELECTRIC PROPERTIES OF Y2O3 THIN FILMS PREPARED BY VACUUM EVAPORATION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (07) : 735 - &

[11] SAYER M, 1970, THIN SOLID FILMS, V6, P261

[12] ELECTRICAL CHARACTERISTICS OF THE RF MAGNETRON-SPUTTERED TANTALUM PENTOXIDE-SILICON INTERFACE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (11) : 2621 - 2625

[13] EFFECTS OF SURFACE OXIDE ON LEAKAGE CURRENT OF MAGNETRON-SPUTTERED TA2O5 ON SI [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (12) : 3054 - 3055

[14] SEYBOLT AU, 1953, PROCEDURES EXPT META, P176

[15] SZE SM, 1981, PHYSICS SEMICONDUCTO

[16] Tsutsumi T., 1970, Toshiba Review (International Edition), P52

[17] DIELECTRIC PROPERTIES OF Y2O3 THIN FILMS PREPARED BY VACUUM EVAPORATION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (07) : 735 - &