ELECTROLUMINESCENCE IN REVERSE-BIASED ZNS-MN SCHOTTKY DIODES

被引：11

作者：

GORDON, NT

RYALL, MD

ALLEN, JW

机构：

[1] Wolfson Institute of Luminescence, School of Physical Sciences, University of St., Andrews, Fife

来源：

APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 09期

关键词：

D O I：

10.1063/1.91256

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electroluminescence in reverse-biased ZnS:Mn Schottky diodes is reported. The characteristics are similar to those ZnSe:Mn LEDS's described previously. Light emission results from the impact excitation of manganese luminescent centres by hot electrons in the depletion region. The characteristic field for impact excitation is 8×105 V cm-1.

引用

页码：691 / 692

页数：2

共 8 条

[1]

ALLEN JW, 1972, J LUMINESCENCE, V7, P228

[2] INJECTION ELECTROLUMINESCENCE IN FORWARD-BIASED ZNS METAL-SEMICONDUCTOR DIODES [J].