INJECTION ELECTROLUMINESCENCE IN FORWARD-BIASED ZNS METAL-SEMICONDUCTOR DIODES

被引：24

作者：

LUKYANCHIKOVA, NB ^{[1
]}

PEKAR, GS ^{[1
]}

TKACHENKO, NN ^{[1
]}

SHIN, HM ^{[1
]}

SHEINKMAN, MK ^{[1
]}

机构：

[1] ACAD SCI UKSSR,INST SEMICOND,KIEV,UKSSR

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1977年 / 41卷 / 01期

关键词：

D O I：

10.1002/pssa.2210410137

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：299 / 305

页数：7

共 9 条

AVEN, M ;

MEAD, CA .

[2]

Aven M., 1973, Journal of Luminescence, V7, P195, DOI 10.1016/0022-2313(73)90067-7

[3] INJECTION ELECTROLUMINESCENCE IN ZNSE METAL-SEMICONDUCTOR DIODES [J].

FISCHER, AG .

PHYSICS LETTERS, 1964, 12 (04) :313-314

[4] ELECTROLUMINESCENT II-VI HETEROJUNCTIONS [J].

FISCHER, AG .

[5]

Fomenko V. S., 1970, EMISSION PROPERTIES

[6]

LUKYANCHIKOVA NB, TO BE PUBLISHED

[7]

LUKYANCHIKOVA NB, 1975, 5TH EUR SOL STAT DEV, P144

[8]

PEKAR GS, 1974, ZH EKSPER THEOR FIZ, V19

[9] ELECTRICAL TRANSPORT IN NGE-PGAAS HETEROJUNCTIONS [J].

RIBEN, AR ;

FEUCHT, DL .