TRANSISTOR CHARACTERISTICS IN A 3-TERMINAL STRUCTURE HAVING YBA2CU3O7-X ELECTRODES ON AN INSULATING SRTIO3 SUBSTRATE

被引：7

作者：

YOSHIDA, A

TAMURA, H

TAKAUCHI, H

HASUO, S

机构：

[1] Fujitsu Limited, Atsugi 243-01

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 10期

关键词：

D O I：

10.1063/1.106390

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Transistor characteristics in which both voltage and current gains exceeded one, were observed at 4.2 K in a three-terminal superconducting structure. A high critical-temperature superconducting YBa2Cu3O7-x emitter and collector were fabricated on a high-permittivity insulating SrTiO3 dielectric with a back-contact base electrode. The three-terminal structures were constructed on 500-mu-m-thick (100) single-crystal SrTiO3 substrates with a relative permittivity of 2 X 10(4) at 4.2 K. YBa2Cu3O7-x films were deposited on chemically cleaned substrates by laser ablation and base leads were constructed of silver paste.

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页码：1242 / 1244

页数：3

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