SMALL-AREA HIGH-SPEED IN P-INGAAS PHOTO-TRANSISTOR

被引：45

作者：

CAMPBELL, JC

BURRUS, CA

DENTAI, AG

OGAWA, K

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 10期

关键词：

D O I：

10.1063/1.92570

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：820 / 821

页数：2

共 14 条

[1]

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[2]

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[4] INGAASP P-I-N PHOTO-DIODES WITH LOW DARK CURRENT AND SMALL CAPACITANCE [J].

BURRUS, CA ;

DENTAI, AG ;

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[5]

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[6]

CAMPBELL JH, UNPUBLISHED

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ELECTRONICS LETTERS, 1981, 17 (05) :178-179

[8]

KENAGI M, 1977, J APPL PHYS, V48, P4389

[9] VERY-HIGH-SPEED BACK-ILLUMINATED INGAAS-INP PIN PUNCH-THROUGH PHOTO-DIODES [J].

LEE, TP ;

BURRUS, CA ;

OGAWA, K ;

DENTAI, AG .

ELECTRONICS LETTERS, 1981, 17 (12) :431-432

[10] INGAAS-INP P-I-N PHOTO-DIODES FOR LIGHTWAVE COMMUNICATIONS AT THE 0.95-1.65 MU-M WAVELENGTH [J].

LEE, TP ;

BURRUS, CA ;

DENTAI, AG .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) :232-238

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