A NOVEL ELECTRONIC-STATE IN (BEDT-TTF)2XHG(SCN)4 - X=K, NH4

被引：5

作者：

KOUNO, T

OSADA, T

HASUMI, M

KAGOSHIMA, S

MIURA, N

OSHIMA, M

MORI, H

NAKAMURA, T

SAITO, G

机构：

[1] UNIV TOKYO,INST SOLID STATE PHYS,TOKYO 106,JAPAN

[2] JAPAN CARLIT CO LTD,CENT RES LAB,SHIBUKAWA,GUNMA 377,JAPAN

[3] INT SUPERCOND TECHNOL CTR,NAGOYA 456,JAPAN

[4] KYOTO UNIV,DEPT CHEM,KYOTO 606,JAPAN

来源：

SYNTHETIC METALS | 1993年 / 56卷 / 01期

关键词：

D O I：

10.1016/0379-6779(93)90435-Y

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Magnetotransport measurements are made in the title compounds under high pressures. An anomalous state is found in the low-temperature-low-field-low-pressure regime in the K-compound while the NH4-one behaves as expected from the current model for quasi two-dimensional electronic systems. The anomalies are found in the so-called angle-dependent oscillation of magnetoresistance and the field and temperature dependence of the resistance. A phase diagram for the K-compound is made experimentally and electronic structures are discussed in relation to the possible spin-density wave found already in the anomalous state.

引用

页码：2425 / 2430

页数：6