TRANSPORT-PROPERTIES OF COMPENSATED A-SI FILMS

被引:18
作者
BEYER, W
MELL, H
OVERHOF, H
机构
[1] UNIV MARBURG, FACHBEREICH PHYS, D-3550 MARBURG, FED REP GER
[2] UNIV PADERBORN, FACHBEREICH PHYS, D-4790 PADERBORN, FED REP GER
来源
JOURNAL DE PHYSIQUE | 1981年 / 42卷 / NC4期
关键词
D O I
10.1051/jphyscol:1981418
中图分类号
学科分类号
摘要
引用
收藏
页码:103 / 106
页数:4
相关论文
共 8 条
[1]   TRANSPORT PROPERTIES OF DOPED AMORPHOUS SILICON [J].
BEYER, W ;
OVERHOF, H .
SOLID STATE COMMUNICATIONS, 1979, 31 (01) :1-4
[2]   TRANSPORT IN LITHIUM-DOPED AMORPHOUS SILICON [J].
BEYER, W ;
FISCHER, R ;
OVERHOF, H .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1979, 39 (03) :205-217
[3]  
BEYER W, 1981, SOLID STATE COMM
[4]   CHARACTERIZATION OF GLOW-DISCHARGE DEPOSITED A-SI-H [J].
FRITZSCHE, H .
SOLAR ENERGY MATERIALS, 1980, 3 (04) :447-501
[5]  
LECOMBER PG, 1979, AMORPHOUS SEMICONDUC
[6]  
Mott N. F., 1979, ELECT PROCESSES NONC
[7]   A MODEL FOR THE ELECTRONIC TRANSPORT IN HYDROGENATED AMORPHOUS-SILICON [J].
OVERHOF, H ;
BEYER, W .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1981, 43 (03) :433-450
[8]   DENSITY OF STATES IN AMORPHOUS-SILICON DETERMINED FROM TRANSPORT EXPERIMENTS [J].
OVERHOF, H ;
BEYER, W .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :375-380