DEGRADATION IN SHORT WAVELENGTH (ALGA)AS LIGHT-EMITTING-DIODES

[1] THRESHOLD TEMPERATURE CHARACTERISTICS OF DOUBLE HETEROSTRUCTURE GA1-XALXAS LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) : 3126 - 3131

[2] GOODWIN AR, 1977, IEEE J QUANTUM ELECT, V13, P696, DOI 10.1109/JQE.1977.1069424

[3] DISLOCATION PINNING IN GAAS BY DELIBERATE INTRODUCTION OF IMPURITIES [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) : 562 - 568

[4] KRESSEL H, 1975, RCA REV, V36, P230

[5] AL2O3 HALF-WAVE FILMS FOR LONG-LIFE CW LASERS [J]. APPLIED PHYSICS LETTERS, 1977, 30 (02) : 87 - 88

[6] LADANY I, UNPUBLISHED

[7] LADANY I, 1976, DEC IEEE INT EL DEV

[8] CALCULATED STRESSES IN MULTILAYERED HETEROEPITAXIAL STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (06) : 2543 - 2547

[9] PROPERTIES OF GE-DOPED GAAS AND ALXGA1-XAS,SN-DOPED ALXGA1-XAS AND SI-TE-DOPED GAAS [J]. JOURNAL OF ELECTRONIC MATERIALS, 1974, 3 (02) : 391 - 408

[1] THRESHOLD TEMPERATURE CHARACTERISTICS OF DOUBLE HETEROSTRUCTURE GA1-XALXAS LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) : 3126 - 3131

[2] GOODWIN AR, 1977, IEEE J QUANTUM ELECT, V13, P696, DOI 10.1109/JQE.1977.1069424

[3] DISLOCATION PINNING IN GAAS BY DELIBERATE INTRODUCTION OF IMPURITIES [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) : 562 - 568

[4] KRESSEL H, 1975, RCA REV, V36, P230

[5] AL2O3 HALF-WAVE FILMS FOR LONG-LIFE CW LASERS [J]. APPLIED PHYSICS LETTERS, 1977, 30 (02) : 87 - 88

[6] LADANY I, UNPUBLISHED

[7] LADANY I, 1976, DEC IEEE INT EL DEV

[8] CALCULATED STRESSES IN MULTILAYERED HETEROEPITAXIAL STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (06) : 2543 - 2547

[9] PROPERTIES OF GE-DOPED GAAS AND ALXGA1-XAS,SN-DOPED ALXGA1-XAS AND SI-TE-DOPED GAAS [J]. JOURNAL OF ELECTRONIC MATERIALS, 1974, 3 (02) : 391 - 408