PRODUCTION AND BEAM ANNEALING OF DAMAGE IN CARBON IMPLANTED SILICON .2.

被引：33

作者：

KOOL, WH ^{[1
]}

ROOSENDAAL, HE ^{[1
]}

WIGGERS, LW ^{[1
]}

SARIS, FW ^{[1
]}

机构：

[1] FOM,INST ATOOM & MOLECUULFYS,KRUISLAAN 407,AMSTERDAM,NETHERLANDS

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1978年 / 36卷 / 1-2期

关键词：

D O I：

10.1080/00337577808233169

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：41 / 48

页数：8

共 14 条

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[8] PRODUCTION AND BEAM ANNEALING OF DAMAGE IN CARBON IMPLANTED SI .1.
ROOSENDAAL, HE
KOOL, WH
SARIS, FW
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 36 (1-2): : 35 - 40
[9] RYSSEL H, 1976, 1975 P INT C APPL IO, P1
[10] THEORY OF SPUTTERING .I. SPUTTERING YIELD OF AMORPHOUS AND POLYCRYSTALLINE TARGETS
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