PRODUCTION AND BEAM ANNEALING OF DAMAGE IN CARBON IMPLANTED SI .1.

被引：8

作者：

ROOSENDAAL, HE ^{[1
]}

KOOL, WH ^{[1
]}

SARIS, FW ^{[1
]}

机构：

[1] FOM,INST ATOOM & MOLECUULFYS,KRUISLAAN 407,AMSTERDAM,NETHERLANDS

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1978年 / 36卷 / 1-2期

关键词：

D O I：

10.1080/00337577808233168

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：35 / 40

页数：6

共 24 条

[1] ELECTRON-PARAMAGNETIC-RESONANCE DETECTION OF OPTICALLY INDUCED DIVACANCY ALIGNMENT IN SILICON
AMMERLAAN, CA
WATKINS, GD
[J]. PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (10): : 3988 - +
[2] 40-200 KV ION ACCELERATOR WITH 3 BEAM LINES
BANNENBERG, JG
BOERBOOM, AJ
[J]. NUCLEAR INSTRUMENTS & METHODS, 1971, 91 (02): : 269 - +
[3] DEFECT STUDIES IN CRYSTALS BY MEANS OF CHANNELING
BOGH, E
[J]. CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) : 653 - &
[4] BOTTIGER J, 1973, P INT C IMPLANTATION
[5] Brice D. K., 1970, Radiation Effects, V6, P77, DOI 10.1080/00337577008235048
[6] DEPTH DISTRIBUTION OF EPR CENTERS IN 400-KEV O+ ION-IMPLANTED SILICON
BROWER, KL
VOOK, FL
BORDERS, JA
[J]. APPLIED PHYSICS LETTERS, 1970, 16 (03) : 108 - &
[7] EERNISSE EP, 1971, 2ND INT C ION IMPL S, P17
[8] Eisen F. H., 1971, Radiation Effects, V7, P143, DOI 10.1080/00337577108232575
[9] Foster C., 1972, Radiation Effects, V16, P139, DOI 10.1080/00337577208232033
[10] GERASIMENKO NN, 1973, SOV PHYS SEMICOND, V6, P1508