THERMODYNAMIC CALCULATIONS FOR GAAS1-XPX VAPOR GROWTH

被引:19
作者
BLEICHER, M
机构
关键词
D O I
10.1149/1.2404272
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:613 / &
相关论文
共 17 条
[2]   THERMODYNAMIC AND EXPERIMENTAL ASPECTS OF GALLIUM ARSENIDE VAPOR GROWTH [J].
BOUCHER, A ;
HOLLAN, L .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (07) :932-&
[3]   GAAS-GAASP HETEROSTRUCTURE INJECTION LASERS [J].
CRAFORD, MG ;
GROVES, WO ;
FOX, MJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (02) :355-+
[5]   THE TRANSPORT OF GALLIUM ARSENIDE IN THE VAPOR PHASE BY CHEMICAL REACTION [J].
FERGUSSON, RR ;
GABOR, T .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (05) :585-592
[6]   PREPARATION OF GAASXP1-X BY VAPOR PHASE REACTION [J].
FINCH, WF ;
MEHAL, EW .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (07) :814-817
[7]  
HAISTY RW, 1964, 0864154 TEX INSTR RE
[8]  
HUBER D, 1971, P INT C HETEROJUNCTI, P195
[9]  
HURLE DTJ, 1966, P INT C CRYSTAL GROW, P241