DEPTH PROFILING OF DEFECTS IN A-SI-H BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY

被引：9

作者：

ASANO, A ^{[1
]}

STUTZMANN, M ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,W-7000 STUTTGART 80,GERMANY

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1991年 / 137卷

关键词：

D O I：

10.1016/S0022-3093(05)80195-4

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The amplitude of interference fringes in optical absorption spectra for thin films has been analyzed in the range of low absorption coefficients and was found to be related to a depth profile of absorbers, e.g. defects. This method has been applied to the sub-bandgap optical absorption spectra measured by photothermal deflection spectroscopy for a-Si:H thin films. It is shown that the analysis of interference fringes provides unique information about surface and interface defects in this material.

引用

页码：623 / 626

页数：4

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