PHOTOTHERMAL DETECTION OF SURFACE-STATES IN AMORPHOUS-SILICON FILMS

被引：19

作者：

AMATO, G

BENEDETTO, G

BOARINO, L

SPAGNOLO, R

机构：

[1] Istituto Elettrotecnico Nazionale G. Ferraris, Torino, I-10128

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1990年 / 50卷 / 05期

关键词：

78.50.Ge; 78.65.Jd;

D O I：

10.1007/BF00324575

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A new method for the determination of surface states in amorphous silicon films is proposed. The method is based on the observation of enhancement of the interference fringe amplitude in photothermal deflection spectra, due to the presence of surface states. A theoretical approach is presented, together with the experimental results and an evaluation of the density of surface states. The method proves to be adequate, in most cases, to yield results in good agreement with those reported in literature. © 1990 Springer-Verlag.

引用

页码：503 / 507

页数：5

共 12 条

[1]

AMATO G, IN PRESS

[2]

AMATO G, 1989, 2 P WINT EUR COURS A

[3] CHARACTERIZATION OF A-SI1-XCX-H A-SI-H AND A-SIN-H A-SI-H HETEROJUNCTIONS BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY [J].