IN0.53GA0.47AS P-I-N PHOTODIODES WITH TRANSPARENT CADMIUM TIN OXIDE CONTACTS

被引：10

作者：

BERGER, PR ^{[1
]}

DUTTA, NK ^{[1
]}

ZYDZIK, G ^{[1
]}

OBRYAN, HM ^{[1
]}

KELLER, U ^{[1
]}

SMITH, PR ^{[1
]}

LOPATA, J ^{[1
]}

SIVCO, D ^{[1
]}

CHO, AY ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 14期

关键词：

D O I：

10.1063/1.108447

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new type of p-i-n In0.53Ga0.47As photodiode having an optically transparent composite top electrode consisting of a thin semitransparent metal layer and a transparent cadmium tin oxide (CTO) layer was investigated. The composite functions as the n or p contact, an optical window, and an antireflection coating. The transparent contact also prevents shadowing of the active layer by the top electrode, thus allowing greater collection of incident light. Since the CTO contact is nonalloyed, interdiffusion into the i-region is not relevant avoiding an increased dark current. The photodiodes exhibited leakage currents of less-than-or-equal-to 8 nA and some as low as 23 pA, with reverse breakdown voltages of greater-than-or-equal-to 15-17 V. Responsivity was measured using a 1.55 mum InGaAsP diode laser focused onto an unpassivated 60 mum diam p-i-n photodiode and was greater-than-or-equal-to 0.41 A/W. Photoresponse of the diodes to 3 ps pulses from a Nd:YLF laser (lambda = 1.047 mum) was 169 and 86 ps for the 60 and 9 mum diodes, respectively. The maximum frequency response of the 9 mum diode is packaging limited, and is expected to have an intrinsic response time of 20-30 ps.

引用

页码：1673 / 1675

页数：3

共 5 条

[1] NOVEL INDIUM OXIDE N-GAAS DIODES [J].