AUGER TRANSITION RATES FOR EXCITONS BOUND TO ACCEPTORS IN SI AND GE

被引：43

作者：

OSBOURN, GC

SMITH, DL

机构：

来源：

PHYSICAL REVIEW B | 1977年 / 16卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.16.5426

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5426 / 5435

页数：10

共 20 条

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