FEEDBACK CHARGE AMPLIFIER INTEGRATED ON THE DETECTOR WAFER

被引：19

作者：

REHAK, P

RESCIA, S

RADEKA, V

GATTI, E

LONGONI, A

SAMPIETRO, M

BERTUCCIO, G

HOLL, P

STRUDER, L

KEMMER, J

PRECHTEL, U

ZIEMANN, T

机构：

[1] CNR,CTR ELETTR QUANTIST & STRUMENTAZ ELETTR,I-20133 MILAN,ITALY

[2] POLITECN MILAN,DIPARTIMENTO ELETTR,I-20133 MILAN,ITALY

[3] MAX PLANCK INST,W-8000 MUNICH,GERMANY

[4] MESSERSCHMITT BOLKOW BLOHM GMBH,W-8000 MUNICH 80,GERMANY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1990年 / 288卷 / 01期

关键词：

D O I：

10.1016/0168-9002(90)90482-L

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A charge sensitive preamplifier was realized on high resistivity detector grade silicon. The amplifier operates on a fully depleted bulk of a silicon wafer. As the anode region of any radiation detector operates at the full depletion as well, the possibility of direct integration of the preamplifier close to the detector anode was demonstrated. All production steps are compatible with production steps for radiation detectors. The implementation of the preamplifier is based on a new type of single sided field effect transistor which is the only type of active element in the design. The performance of single components and of the whole preamplifier is reported. © 1990.

引用

页码：168 / 175

页数：8

共 10 条

[1] SILICON DRIFT CHAMBERS - 1ST RESULTS AND OPTIMUM PROCESSING OF SIGNALS [J].