LATTICE-MATCHED HETEROSTRUCTURES AS SCHOTTKY BARRIERS - HGSE-CDSE

被引：11

作者：

BEST, JS

MCCALDIN, JO

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1979年 / 16卷 / 05期

关键词：

D O I：

10.1116/1.570174

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1130 / 1133

页数：4

共 13 条

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[4] KROGER FA, COMMUNICATION
[5] NEW PHENOMENA IN SCHOTTKY-BARRIER FORMATION ON III-V-COMPOUNDS
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04): : 802 - 806
[7] METAL-SEMICONDUCTOR SURFACE BARRIERS
MEAD, CA
[J]. SOLID-STATE ELECTRONICS, 1966, 9 (11-1) : 1023 - &
[8] PANKOVE JI, 1971, OPTICAL PROCESSES SE, P290
[9] ROTH WL, 1967, PHYSICS CHEM 2 6 COM, pCH3
[10] HIGHLY ELECTRONEGATIVE CONTACTS TO COMPOUND SEMICONDUCTORS
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BEST, JS
MCCALDIN, JO
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04): : 930 - 934