DEPENDENCE ON CRYSTALLINE FACE OF BAND BENDING IN CS2 O-ACTIVATED GAAS

[1] 3-5 COMPOUND PHOTOCATHODES - A NEW FAMILY OF PHOTOEMITTERS WITH GREATLY IMPROVED PERFORMANCE [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (11): : 1788 - +

[2] EDEN RC, 1967, THESIS STANFORD U

[3] GARBE S, 1970, GALLIUM ARSENIDE REL, P208

[4] HOENE EL, 1970, THESIS TH DARMSTADT

[5] LONG-WAVELENGTH THRESHOLD OF CS2O-COATED PHOTOEMITTERS [J]. APPLIED PHYSICS LETTERS, 1970, 16 (09) : 370 - &

[6] JAMES LW, 1969, 1968 P S GAAS, P230

[7] EFFICIENT PHOTOEMISSION FROM GE-DOPED GAAS GROWN BY LIQUID-PHASE EPITAXY [J]. APPLIED PHYSICS LETTERS, 1971, 18 (04) : 121 - &

[8] GaAs-Cs: A NEW TYPE OF PHOTOEMITTER [J]. SOLID STATE COMMUNICATIONS, 1965, 3 (08) : 189 - 193

[9] FERMI LEVEL STABILIZATION AT CESIATED SEMICONDUCTOR SURFACES [J]. SOLID STATE COMMUNICATIONS, 1967, 5 (04) : 303 - &

[10] PHOTOEMISSION FROM GAAS-CS-O [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1968, 1 (02) : 155 - &

[1] 3-5 COMPOUND PHOTOCATHODES - A NEW FAMILY OF PHOTOEMITTERS WITH GREATLY IMPROVED PERFORMANCE [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (11): : 1788 - +

[2] EDEN RC, 1967, THESIS STANFORD U

[3] GARBE S, 1970, GALLIUM ARSENIDE REL, P208

[4] HOENE EL, 1970, THESIS TH DARMSTADT

[5] LONG-WAVELENGTH THRESHOLD OF CS2O-COATED PHOTOEMITTERS [J]. APPLIED PHYSICS LETTERS, 1970, 16 (09) : 370 - &

[6] JAMES LW, 1969, 1968 P S GAAS, P230

[7] EFFICIENT PHOTOEMISSION FROM GE-DOPED GAAS GROWN BY LIQUID-PHASE EPITAXY [J]. APPLIED PHYSICS LETTERS, 1971, 18 (04) : 121 - &

[8] GaAs-Cs: A NEW TYPE OF PHOTOEMITTER [J]. SOLID STATE COMMUNICATIONS, 1965, 3 (08) : 189 - 193

[9] FERMI LEVEL STABILIZATION AT CESIATED SEMICONDUCTOR SURFACES [J]. SOLID STATE COMMUNICATIONS, 1967, 5 (04) : 303 - &

[10] PHOTOEMISSION FROM GAAS-CS-O [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1968, 1 (02) : 155 - &