FERROELECTRIC (LA,SR)(2)CUO4 EPITAXIAL HETEROSTRUCTURE WITH HIGH THERMAL-STABILITY

被引：21

作者：

WATANABE, Y

TANAMURA, M

MATSUMOTO, Y

ASAMI, H

KATO, A

机构：

[1] Mitsubishi Chemical Yokohama Research Center, Yokohama

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 03期

关键词：

D O I：

10.1063/1.113524

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Three-dimensionally aligned epitaxial (Pb,La)(Zr,Ti)O3/(La,Sr)2CuO4 multilayers were grown on SrTiO3 (100) single crystals by pulse laser deposition. A cube-on-cube epitaxial relationship of these multilayers was confirmed by the θ-2θ diffraction profile and the pole figure. The stability of their interfaces was confirmed by depth profiles and x-ray diffractometry of the as-deposited and the annealed multilayers having 100-300-Å-thick (La,Sr)2CuO4 layers. The results suggest that the multilayers can be applied to the ferroelectric field-effect transistor. © 1995 American Institute of Physics.

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页码：299 / 301

页数：3

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