ENDURANCE AND RETENTION OF MNOS DEVICES OVER THE TEMPERATURE-RANGE FROM -50-DEGREES-C TO +125-DEGREES-C

被引:6
作者
JONES, RV [1 ]
BROWN, WD [1 ]
机构
[1] UNIV ARKANSAS,DEPT ELECT ENGN,FAYETTEVILLE,AR 72701
关键词
D O I
10.1007/BF02661186
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:959 / 972
页数:14
相关论文
共 9 条
[1]   SILICON-NITRIDE TRAP PROPERTIES AS REVEALED BY CHARGE-CENTROID MEASUREMENTS ON MNOS DEVICES [J].
ARNETT, PC ;
YUN, BH .
APPLIED PHYSICS LETTERS, 1975, 26 (03) :94-96
[2]   RETENTION AND ENDURANCE CHARACTERISTICS OF HC1-ANNEALED AND UNANNEALED MNOS CAPACITORS [J].
BROWN, WD .
SOLID-STATE ELECTRONICS, 1979, 22 (04) :373-378
[3]   THEORY OF MNOS MEMORY DEVICE BEHAVIOR [J].
FERRISPRABHU, AV .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1973, 17 (02) :125-134
[4]   ELECTRICAL AND IRRADIATION PERFORMANCE OF MNOS-ARRAYS [J].
KIM, MJ ;
DOYLE, JT ;
PATTERSON, WJ ;
PAJAK, RW .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (11) :1837-1846
[5]   DISCHARGE OF MNOS STRUCTURES AT ELEVATED-TEMPERATURES [J].
LUNDKVIST, L ;
SVENSSON, C ;
HANSSON, B .
SOLID-STATE ELECTRONICS, 1976, 19 (03) :221-227
[6]  
ROSS EC, 1970, RCA REV, V31, P467
[8]  
WOODS MH, 1972, 10TH P REL PHYS M, V120
[9]  
1977, MNOS CHARACTERISTICS