SCHOTTKY-BARRIER AND PN-JUNCTION I/V PLOTS - SMALL-SIGNAL EVALUATION

[11] MODULATION EFFECT BY INTENSE HOLE INJECTION IN EPITAXIAL SILICON SCHOTTKY-BARRIER-DIODES [J]. SOLID-STATE ELECTRONICS, 1973, 16 (03) : 357 - 364

[12] KONUMA M, 1987, IN PRESS 8TH S PLASM

[13] AN IMPROVED FORWARD IV METHOD FOR NONIDEAL SCHOTTKY DIODES WITH HIGH SERIES RESISTANCE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (10) : 1502 - 1503

[14] Schottky-barrier height determination in the presence of interfacial disorder [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1986, 1 (02) : 137 - 142

[15] MODIFIED FORWARD IV PLOT FOR SCHOTTKY DIODES WITH HIGH SERIES RESISTANCE [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (07) : 5052 - 5053

[16] SATURATION OF JUNCTION VOLTAGE IN STRIPE-GEOMETRY (AIGA)AS DOUBLE-HETEROSTRUCTURE JUNCTION LASERS [J]. APPLIED PHYSICS LETTERS, 1976, 28 (12) : 714 - 716

[17] SATO K, 1985, J APPL PHYS, V58, P3658

[18] MINORITY CARRIER INJECTION AND CHARGE STORAGE IN EPITAXIAL SCHOTTKY BARRIER DIODES [J]. SOLID-STATE ELECTRONICS, 1965, 8 (03) : 299 - +

[19] Sze S., 1981, PHYS SEMICONDUCTOR D, P415, DOI [10.1002/0470068329, DOI 10.1002/0470068329]

[20] INTERFACE-STATE MEASUREMENTS AT SCHOTTKY CONTACTS - A NEW ADMITTANCE TECHNIQUE [J]. PHYSICAL REVIEW LETTERS, 1986, 57 (08) : 1080 - 1083

[11] MODULATION EFFECT BY INTENSE HOLE INJECTION IN EPITAXIAL SILICON SCHOTTKY-BARRIER-DIODES [J]. SOLID-STATE ELECTRONICS, 1973, 16 (03) : 357 - 364

[12] KONUMA M, 1987, IN PRESS 8TH S PLASM

[13] AN IMPROVED FORWARD IV METHOD FOR NONIDEAL SCHOTTKY DIODES WITH HIGH SERIES RESISTANCE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (10) : 1502 - 1503

[14] Schottky-barrier height determination in the presence of interfacial disorder [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1986, 1 (02) : 137 - 142

[15] MODIFIED FORWARD IV PLOT FOR SCHOTTKY DIODES WITH HIGH SERIES RESISTANCE [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (07) : 5052 - 5053

[16] SATURATION OF JUNCTION VOLTAGE IN STRIPE-GEOMETRY (AIGA)AS DOUBLE-HETEROSTRUCTURE JUNCTION LASERS [J]. APPLIED PHYSICS LETTERS, 1976, 28 (12) : 714 - 716

[17] SATO K, 1985, J APPL PHYS, V58, P3658

[18] MINORITY CARRIER INJECTION AND CHARGE STORAGE IN EPITAXIAL SCHOTTKY BARRIER DIODES [J]. SOLID-STATE ELECTRONICS, 1965, 8 (03) : 299 - +

[19] Sze S., 1981, PHYS SEMICONDUCTOR D, P415, DOI [10.1002/0470068329, DOI 10.1002/0470068329]

[20] INTERFACE-STATE MEASUREMENTS AT SCHOTTKY CONTACTS - A NEW ADMITTANCE TECHNIQUE [J]. PHYSICAL REVIEW LETTERS, 1986, 57 (08) : 1080 - 1083