VACUUM-DEPOSITED THIN-FILM P-SE/N-CDSE HETEROJUNCTION DIODES

被引:2
作者
MOORE, RM
BUSANOVICH, CJ
机构
关键词
D O I
10.1109/T-ED.1970.16974
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:305 / +
页数:1
相关论文
共 12 条
[1]  
Berry R.W., 1968, THIN FILM TECHNOLOGY
[2]   THIN FILM CDS-CDTE HETEROJUNCTION DIODES [J].
DUTTON, RW ;
MULLER, RS .
SOLID-STATE ELECTRONICS, 1968, 11 (08) :749-&
[3]   THIN-FILM TITANIUM OXIDE DIODES [J].
HUBER, F .
SOLID-STATE ELECTRONICS, 1962, 5 (NOV-D) :410-&
[4]  
HUBER F, 1963, IEE T COMPONENTS PAR, VCP10, P10
[5]  
Huber F., 1965, MICROELECTRON RELIAB, V4, P283
[6]  
LLOYD P, 1965, BR COMMUN ELECTRON, V12, P363
[7]  
MEINDL JD, 1967, IEEE T ELECTRON DEV, VED14, P405
[8]   AN EVAPORATED HETEROJUNCTION DIODE STRAIN SENSOR [J].
MOORE, RM ;
BUSANOVICH, CJ .
PROCEEDINGS OF THE IEEE, 1969, 57 (04) :735-+
[9]   HETERODE STRAIN SENSOR - AN EVAPORATED HETEROJUNCTION DEVICE [J].
MOORE, RM ;
BUSANOVICH, CJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (10) :850-+
[10]   VAPOR-DEPOSITED THIN-FILM HETEROJUNCTION DIODES [J].
MULLER, RS ;
ZULEEG, R .
JOURNAL OF APPLIED PHYSICS, 1964, 35 (05) :1550-+