HIGH-MOBILITY EPITAXIAL LAYERS OF PBTE AND PB1-XSNXTE PREPARED BY POST-GROWTH ANNEALING

被引：35

作者：

HOLLOWAY, H

LOGOTHEI.EM

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1971年 / 42卷 / 11期

关键词：

D O I：

10.1063/1.1659813

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4522 / &

共 12 条

[1] MOBILITY OF ELECTRONS AND HOLES IN PBS, PBSE, AND PBTE BETWEEN ROOM TEMPERATURE AND 4.2-DEGREES-K [J].

ALLGAIER, RS ;

SCANLON, WW .

PHYSICAL REVIEW, 1958, 111 (04) :1029-1037

[2] PREPARATION AND PROPERTIES OF PB1-X SNX TE EPITAXIAL FILMS [J].

FARINRE, TO ;

ZEMEL, JN .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1970, 7 (01) :121-&

[3] MOSAIC STRUCTURE [J].

HIRSCH, PB .

PROGRESS IN METAL PHYSICS, 1956, 6 :236-&

[4] EPITAXIAL GROWTH OF LEAD TIN TELLURIDE [J].

HOLLOWAY, H ;

LOGOTHETIS, EM ;

WILKES, E .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (08) :3543-+

[5] MOBILITY STUDIES OF EPITAXIAL PBTE THIN FILMS [J].

JAYADEVAIAH, TS ;

KIRBY, RE .

THIN SOLID FILMS, 1970, 6 (05) :343-+

[6]

Logothetis E. M., 1970, Solid State Communications, V8, P1937, DOI 10.1016/0038-1098(70)90663-0

[7]

MACHONIS AA, 1964, T METALL SOC AIME, V230, P333

[8] PHOTOCONDUCTIVITY IN SINGLE-CRYSTAL PB1-XSNXTE [J].

MELNGAILIS, I ;

HARMAN, TC .

APPLIED PHYSICS LETTERS, 1968, 13 (05) :180-+

[9]

MENGAILIS I, 1968, J PHYS C, V29, P84

[10]

ZEMEL JN, 1965, PHYS REV A, V140, P330

← 1 2 →