CHEMICAL AND ELECTRONIC-STRUCTURE OF COMPOUND SEMICONDUCTOR-METAL INTERFACES

被引：31

作者：

BRILLSON, LJ

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1982年 / 20卷 / 03期

关键词：

D O I：

10.1116/1.571619

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：652 / 658

页数：7

共 68 条

[1] Abbati I., UNPUB
[2] CHEMICAL BONDING AND STRUCTURE OF METAL-SEMICONDUCTOR INTERFACES
ANDREWS, JM
PHILLIPS, JC
[J]. PHYSICAL REVIEW LETTERS, 1975, 35 (01) : 56 - 59
[3] APPLEBAUM JA, 1974, 12TH P INT C PHYS SE, P675
[4] INTERFACE STATES AT GA-GAAS INTERFACE
BACHRACH, RZ
BIANCONI, A
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02): : 525 - 528
[5] METAL-SEMICONDUCTOR SURFACE AND INTERFACE STATES ON (110) GAAS
BACHRACH, RZ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1340 - 1343
[6] SURFACE-REACTIONS AND INTERDIFFUSION
BACHRACH, RZ
BAUER, RS
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1149 - 1153
[7] BACHRACH RZ, 1978, 14TH P INT C PHYS SE, P1073
[8] SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT
BARDEEN, J
[J]. PHYSICAL REVIEW, 1947, 71 (10): : 717 - 727
[9] AU AND AL INTERFACE REACTIONS WITH SIO2
BAUER, RS
BACHRACH, RZ
BRILLSON, LJ
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (11) : 1006 - 1008
[10] SELF-CONSISTENT-FIELD MODEL OF BIMETALLIC INTERFACES .I. DIPOLE EFFECTS
BENNETT, AJ
DUKE, CB
[J]. PHYSICAL REVIEW, 1967, 160 (03): : 541 - +