CHANNELING EFFECT MEASUREMENTS OF HE-4-INDUCED DAMAGE IN V3SI SINGLE-CRYSTALS

被引：25

作者：

MEYER, O

SEEBER, B

机构：

[1] KERN FORSCH ZENTRUM KARLSRUHE,INST ANGEW KERNPHYS,D-7500 KARLSRUHE,FED REP GER

[2] UNIV MUNICH,FORSCH LAB FESTKORPERCHEM,D-8000 MUNICH 2,FED REP GER

来源：

关键词：

D O I：

10.1016/0038-1098(77)90146-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：603 / 607

页数：5

共 14 条

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[2] MONTE CARLO CHANNELING CALCULATIONS
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[3] GEERK J, 1976, KFK2357, P110
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[6] RADIATION-DAMAGE IN ION-IMPLANTED VANADIUM
GETTINGS, M
MEYER, O
LINKER, G
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1974, 21 (01): : 51 - 59
[7] MORGAN DV, 1973, CHANNELLING
[8] LATTICE LOCATION BY CHANNELING ANGULAR-DISTRIBUTIONS - BI IMPLANTED IN SI
PICRAUX, ST
GIBSON, WM
BROWN, WL
[J]. PHYSICAL REVIEW B, 1972, 6 (04): : 1382 - &
[9] POATE JM, 1976, APR ROCH C SUP, V3
[10] SCHWEISS P, 1974, KFK2054 TEIL I NUKL, P12