BALLISTIC TRANSPORT IN A NONPARABOLIC BAND-STRUCTURE

被引：8

作者：

LEE, J

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 07期

关键词：

D O I：

10.1063/1.329350

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4676 / 4680

页数：5

共 10 条

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[6] LOW-TEMPERATURE FET FOR LOW-POWER HIGH-SPEED LOGIC [J].

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WARRINER, RA .

ELECTRONICS LETTERS, 1977, 13 (06) :156-158

[7] ORIENTATION DEPENDENCE OF BALLISTIC ELECTRON-TRANSPORT AND IMPACT IONIZATION [J].

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[8] BALLISTIC AND NEAR BALLISTIC TRANSPORT IN GAAS [J].

SHUR, MS ;

EASTMAN, LF .

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[9] BALLISTIC TRANSPORT IN SEMICONDUCTOR AT LOW-TEMPERATURES FOR LOW-POWER HIGH-SPEED LOGIC [J].

SHUR, MS ;

EASTMAN, LF .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) :1677-1683

[10]

WANG S, 1966, SOLID STATE ELECTRON

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