ORIENTATION DEPENDENCE OF BALLISTIC ELECTRON-TRANSPORT AND IMPACT IONIZATION

被引：9

作者：

SHICHIJO, H ^{[1
]}

HESS, K ^{[1
]}

STILLMAN, GE ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

ELECTRONICS LETTERS | 1980年 / 16卷 / 06期

关键词：

D O I：

10.1049/el:19800149

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：208 / 210

页数：3

共 6 条

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CAPASSO, F ;

NAHORY, RE ;

POLLACK, MA .

SOLID-STATE ELECTRONICS, 1979, 22 (11) :977-979

[2] BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES [J].

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[3] INTERBAND SCATTERING EFFECTS ON SECONDARY IONIZATION COEFFICIENTS IN GAAS [J].

LAW, HD ;

LEE, CA .

SOLID-STATE ELECTRONICS, 1978, 21 (02) :331-340

[4] BAND-STRUCTURE DEPENDENCE OF IMPACT IONIZATION BY HOT CARRIERS IN SEMICONDUCTORS - GAAS [J].

PEARSALL, T ;

CAPASSO, F ;

NAHORY, RE ;

POLLACK, MA ;

CHELIKOWSKY, JR .

SOLID-STATE ELECTRONICS, 1978, 21 (01) :297-302

[5] PROBLEMS RELATED TO P-N JUNCTIONS IN SILICON [J].

SHOCKLEY, W .

SOLID-STATE ELECTRONICS, 1961, 2 (01) :35-+

[6] BALLISTIC TRANSPORT IN SEMICONDUCTOR AT LOW-TEMPERATURES FOR LOW-POWER HIGH-SPEED LOGIC [J].

SHUR, MS ;

EASTMAN, LF .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) :1677-1683

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