INFLUENCE OF REFLECTIVITY OF FEMTOSECOND TRANSMISSION SPECTROSCOPY OF THIN GAAS FILMS

被引：4

作者：

HUNSCHE, S

HEESEL, H

KURZ, H

机构：

[1] Institut für Halbleitertechnik II, Rheinisch Westfälische Technische Hochshule Aachen, Sommerfeldstr. 24

来源：

OPTICS COMMUNICATIONS | 1994年 / 109卷 / 3-4期

关键词：

D O I：

10.1016/0030-4018(94)90690-4

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The femtosecond dynamics of the nonlinear transmission and reflectivity in thin films of GaAs are investigated. Both nonlinear optical responses are required to determine carrier-induced absorption changes. This has significant implications on the interpretaton of spectral hole burning experiments in semiconductors.

引用

页码：258 / 264

页数：7

共 19 条

[1] CHIRP MEASUREMENT OF LARGE-BANDWIDTH FEMTOSECOND OPTICAL PULSES USING 2-PHOTON ABSORPTION [J].