BARRIER TEMPERATURE AT TURNOVER IN GERMANIUM PARA-NORMAL JUNCTION

被引：5

作者：

YAMAGUCHI, J

HAMAKAWA, Y

机构：

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1959年 / 14卷 / 02期

关键词：

D O I：

10.1143/JPSJ.14.232

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

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页码：232 / 233

页数：2

相关论文

共 6 条

[1] HIGH INVERSE VOLTAGE GERMANIUM RECTIFIERS
BENZER, S
[J]. JOURNAL OF APPLIED PHYSICS, 1949, 20 (08) : 804 - 815
[2] THE TURNOVER PHENOMENON IN THERMISTORS AND IN POINT-CONTACT GERMANIUM RECTIFIERS
BURGESS, RE
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1955, 68 (11): : 908 - 917
[3] EFFECT OF DISLOCATIONS ON BREAKDOWN IN SILICON P-N JUNCTIONS
CHYNOWETH, AG
PEARSON, GL
[J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (07) : 1103 - 1110
[4] OBSERVATIONS ON A FORM OF BREAKDOWN IN GERMANIUM DIODES
LEMPICKI, A
WOOD, C
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1954, 67 (412): : 328 - 337
[5] MOLL JL, 1958, PHYS REV, V110, P612
[6] HIGH ELECTRIC FIELD EFFECTS IN GERMANIUM PARA-NORAMAL JUNCTION
YAMAGUCHI, J
HAMAKAWA, Y
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1959, 14 (01) : 15 - 21