ELECTRICAL CHARACTERIZATION AND SUBBAND STRUCTURES IN ANTIMONY DELTA-DOPED MOLECULAR-BEAM EPITAXY-SILICON LAYERS

被引：11

作者：

LI, HM

NI, WX

WILLANDER, M

BERGGREN, KF

SERNELIUS, BE

HANSSON, GV

机构：

来源：

THIN SOLID FILMS | 1989年 / 183卷

关键词：

D O I：

10.1016/0040-6090(89)90458-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：331 / 338

页数：8

共 12 条

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[2] ELECTRICAL-PROPERTIES OF SI(100) FILMS DOPED WITH LOW-ENERGY (LESS-THAN-OR-EQUAL-TO 150 EV) SB IONS DURING GROWTH BY MOLECULAR-BEAM EPITAXY [J].

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NI WX, IN PRESS

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TEMPLE G, 1989, J PHYS-PARIS, V48, P259

[9] CONTROLLED ATOMIC LAYER DOPING AND ALD-MOSFET FABRICATION IN SI [J].

VANGORKUM, AA ;

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SHIRAKI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (12) :L1933-L1936

[10] SCHOTTKY-BARRIER TUNNELING SPECTROSCOPY FOR THE ELECTRONIC SUBBANDS OF A DELTA-DOPING LAYER [J].

ZACHAU, M ;

KOCH, F ;

PLOOG, K ;

ROENTGEN, P ;

BENEKING, H .

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