ELECTRICAL-PROPERTIES OF SI(100) FILMS DOPED WITH LOW-ENERGY (LESS-THAN-OR-EQUAL-TO 150 EV) SB IONS DURING GROWTH BY MOLECULAR-BEAM EPITAXY

被引：25

作者：

FONS, P

HIRASHITA, N

MARKERT, LC

KIM, YW

GREENE, JE

NI, WX

KNALL, J

HANSSON, GV

SUNDGREN, JE

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

[2] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[3] LINKOPING UNIV,DEPT PHYS,S-58183 LINKOPING,SWEDEN

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 18期

关键词：

D O I：

10.1063/1.99809

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1732 / 1734

页数：3

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