TEMPERATURE-DEPENDENCE OF THE FARADAY-ROTATION IN NORMAL-TYPE SILICON

[1] FINETTI M, 1976, J APPL PHYS, V47, P4590, DOI 10.1063/1.322383

[2] REFRACTIVE-INDEXES AND TEMPERATURE COEFFICIENTS OF GERMANIUM AND SILICON [J]. APPLIED OPTICS, 1976, 15 (10): : 2348 - 2351

[3] VARIATION OF IMPURITY-TO-BAND ACTIVATION-ENERGIES WITH IMPURITY DENSITY [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (01) : 373 - 380

[4] CYCLOTRON-RESONANCE MEASUREMENTS OF NON-PARABOLICITY OF CONDUCTION BANDS IN SILICON AND GERMANIUM [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1976, 9 (14): : 2803 - 2808

[5] ELECTRON EFFECTIVE MASS DETERMINATION FROM INTRABAND FARADAY-ROTATION IN SILICON [J]. PHYSICA B & C, 1977, 89 (APR): : 14 - 17

[6] CYCLOTRON RESONANCE OF ELECTRONS IN SILICON AT TEMPERATURES UP TO 200 DEGREES K [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1966, 87 (555P): : 263 - &

[7] UKHANOV YI, 1963, SOV PHYS-SOL STATE, V4, P2010

[8] UKHANOV YI, 1964, SOV PHYS-SOL STATE, V5, P2144

[9] CONDUCTION BAND EFFECTIVE MASS IN N-TYPE SILICON [J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1970, 3 (06): : 1410 - &

[1] FINETTI M, 1976, J APPL PHYS, V47, P4590, DOI 10.1063/1.322383

[2] REFRACTIVE-INDEXES AND TEMPERATURE COEFFICIENTS OF GERMANIUM AND SILICON [J]. APPLIED OPTICS, 1976, 15 (10): : 2348 - 2351

[3] VARIATION OF IMPURITY-TO-BAND ACTIVATION-ENERGIES WITH IMPURITY DENSITY [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (01) : 373 - 380

[4] CYCLOTRON-RESONANCE MEASUREMENTS OF NON-PARABOLICITY OF CONDUCTION BANDS IN SILICON AND GERMANIUM [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1976, 9 (14): : 2803 - 2808

[5] ELECTRON EFFECTIVE MASS DETERMINATION FROM INTRABAND FARADAY-ROTATION IN SILICON [J]. PHYSICA B & C, 1977, 89 (APR): : 14 - 17

[6] CYCLOTRON RESONANCE OF ELECTRONS IN SILICON AT TEMPERATURES UP TO 200 DEGREES K [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1966, 87 (555P): : 263 - &

[7] UKHANOV YI, 1963, SOV PHYS-SOL STATE, V4, P2010

[8] UKHANOV YI, 1964, SOV PHYS-SOL STATE, V5, P2144

[9] CONDUCTION BAND EFFECTIVE MASS IN N-TYPE SILICON [J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1970, 3 (06): : 1410 - &