ELECTRON EFFECTIVE MASS DETERMINATION FROM INTRABAND FARADAY-ROTATION IN SILICON

[1] CONTACT SIZE EFFECTS ON VAN VANDERPAUW METHOD FOR RESISTIVITY AND HALL-COEFFICIENT MEASUREMENT [J]. SOLID-STATE ELECTRONICS, 1974, 17 (12) : 1217 - 1227

[2] PLASMA EDGE REFLECTION STUDY OF CONDUCTION-BAND EFFECTIVE MASS IN N-TYPE SILICON [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1973, 57 (01): : K69 - K72

[3] IMPURITY AND LATTICE SCATTERING PARAMETERS AS DETERMINED FROM HALL AND MOBILITY ANALYSIS IN N-TYPE SILICON [J]. PHYSICAL REVIEW B, 1973, 8 (12) : 5632 - 5653

[4] Pamplin B. R., 1975, CRYSTAL GROWTH

[5] INFRA-RED FARADAY ROTATION IN SEMICONDUCTORS - DOUBLE BEAM PHASE-SENSITIVE METHOD FOR MEASUREMENT OF INFRA-RED FARADAY ROTATION ELLIPTICITY + VOIGT EFFECT [J]. INFRARED PHYSICS, 1964, 4 (01): : 13 - &

[6] PUTLEY EH, 1968, HALL EFFECT SEMICOND, P97

[7] INFRARED REFRACTIVE INDEXES OF SILICON GERMANIUM AND MODIFIED SELENIUM GLASS [J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1957, 47 (03) : 244 - 246

[8] CYCLOTRON RESONANCE OF ELECTRONS IN SILICON AT TEMPERATURES UP TO 200 DEGREES K [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1966, 87 (555P): : 263 - &

[9] van der Pauw L. J., 1958, PHILIPS RES REP, V1958, P1

[10] CONDUCTION BAND EFFECTIVE MASS IN N-TYPE SILICON [J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1970, 3 (06): : 1410 - &

[1] CONTACT SIZE EFFECTS ON VAN VANDERPAUW METHOD FOR RESISTIVITY AND HALL-COEFFICIENT MEASUREMENT [J]. SOLID-STATE ELECTRONICS, 1974, 17 (12) : 1217 - 1227

[2] PLASMA EDGE REFLECTION STUDY OF CONDUCTION-BAND EFFECTIVE MASS IN N-TYPE SILICON [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1973, 57 (01): : K69 - K72

[3] IMPURITY AND LATTICE SCATTERING PARAMETERS AS DETERMINED FROM HALL AND MOBILITY ANALYSIS IN N-TYPE SILICON [J]. PHYSICAL REVIEW B, 1973, 8 (12) : 5632 - 5653

[4] Pamplin B. R., 1975, CRYSTAL GROWTH

[5] INFRA-RED FARADAY ROTATION IN SEMICONDUCTORS - DOUBLE BEAM PHASE-SENSITIVE METHOD FOR MEASUREMENT OF INFRA-RED FARADAY ROTATION ELLIPTICITY + VOIGT EFFECT [J]. INFRARED PHYSICS, 1964, 4 (01): : 13 - &

[6] PUTLEY EH, 1968, HALL EFFECT SEMICOND, P97

[7] INFRARED REFRACTIVE INDEXES OF SILICON GERMANIUM AND MODIFIED SELENIUM GLASS [J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1957, 47 (03) : 244 - 246

[8] CYCLOTRON RESONANCE OF ELECTRONS IN SILICON AT TEMPERATURES UP TO 200 DEGREES K [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1966, 87 (555P): : 263 - &

[9] van der Pauw L. J., 1958, PHILIPS RES REP, V1958, P1

[10] CONDUCTION BAND EFFECTIVE MASS IN N-TYPE SILICON [J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1970, 3 (06): : 1410 - &