IMPURITY AND LATTICE SCATTERING PARAMETERS AS DETERMINED FROM HALL AND MOBILITY ANALYSIS IN N-TYPE SILICON

被引：165

作者：

NORTON, P ^{[1
]}

BRAGGINS, T ^{[1
]}

LEVINSTEIN, H ^{[1
]}

机构：

[1] SYRACUSE UNIV, DEPT PHYS, SYRACUSE, NY 13210 USA

来源：

关键词：

D O I：

10.1103/PhysRevB.8.5632

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5632 / 5653

页数：22

共 99 条

[1] AGGARWAL RL, 1965, PHYS REV, V140, P1246
[2] OPTICAL DETERMINATION OF THE VALLEY-ORBIT SPLITTING OF THE GROUND STATE OF DONORS IN SILICON
AGGARWAL, RL
[J]. SOLID STATE COMMUNICATIONS, 1964, 2 (06) : 163 - 166
[3] EFFECT OF UNIAXIAL STRESS ON EXICTATION SPECTRA OF DONORS IN SILICON
AGGARWAL, RL
RAMDAS, AK
[J]. PHYSICAL REVIEW, 1965, 137 (2A): : A602 - &
[4] ANSELM AI, 1953, ZH EKSP TEOR FIZ+, V24, P83
[5] ASCHE M, 1968, 9 P INT C PHYS SEM, P793
[6] ASTROV YA, 1973, SOV PHYS SEMICOND+, V6, P1528
[7] ASTROV YA, 1972, FIZ TEKH POLUPROV, V6, P1773
[8] PIEZORESISTANCE AND PIEZO-HALL-EFFECT IN N-TYPE SILICON
AUBREY, JE
GUBLER, W
HENNINGSEN, T
KOENIG, SH
[J]. PHYSICAL REVIEW, 1963, 130 (05): : 1667 - +
[9] INFRARED FREE-CARRIER ABSORPTION IN N-TYPE SILICON
BASU, PK
NAG, BR
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1972, 53 (01): : K61 - &
[10] ROOM-TEMPERATURE CONDUCTIVITY ANISOTROPY AND POPULATION REDISTRIBUTION IN N-TYPE SILICON AT HIGH ELECTRIC FIELDS
BASU, PK
NAG, BR
[J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (02): : 627 - &