ROOM-TEMPERATURE CONDUCTIVITY ANISOTROPY AND POPULATION REDISTRIBUTION IN N-TYPE SILICON AT HIGH ELECTRIC FIELDS

被引：7

作者：

BASU, PK

NAG, BR

机构：

来源：

PHYSICAL REVIEW B-SOLID STATE | 1970年 / 1卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.1.627

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：627 / &

共 20 条

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[5]

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[7]

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[8] TEMPERATURE DEPENDENCE OF HOT ELECTRON DRIFT VELOCITY IN SILICON AT HIGH ELECTRIC FIELD [J].

DUH, CY ;

MOLL, JL .

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[9] CONDUCTIVITY ANISOTROPY + HOT ELECTRON TEMPERATURE IN SILICON [J].

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[10] CONDUCTIVITY ANISOTROPY OF HOT ELECTRONS IN N-TYPE SILICON HEATED BY MICROWAVE FIELDS [J].

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