CONDUCTIVITY ANISOTROPY OF HOT ELECTRONS IN N-TYPE SILICON HEATED BY MICROWAVE FIELDS

被引：17

作者：

HAMAGUCHI, C

INUISHI, Y

机构：

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1966年 / 27卷 / 09期

关键词：

D O I：

10.1016/0022-3697(66)90146-6

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：1511 / +

页数：1

共 31 条

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[9] CONDUCTIVITY ANISOTROPY OF WARM AND HOT ELECTRONS IN SILICON AND GERMANIUM [J].

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