CONDUCTIVITY ANISOTROPY OF WARM AND HOT ELECTRONS IN SILICON AND GERMANIUM

被引：22

作者：

JORGENSEN, MH

MEYER, NI

SCHMIDTTIEDEMANN, KJ

机构：

来源：

关键词：

D O I：

10.1016/0038-1098(63)90014-0

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：226 / 233

页数：8

共 17 条

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[2] PIEZOWIDERSTANDSMESSUNGEN AN NORMAL-SILIZIUM
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[3] EFFECT OF HIGH PRESSURE ON SOME HOT ELECTRON PHENOMENA IN N-TYPE GERMANIUM
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NATHAN, MI
PAUL, W
SMITH, AC
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[4] KOENIG SH, 1959, P PHYS SOC, V73, P952
[5] SCATTERING OF CONDUCTION ELECTRONS BY LATTICE VIBRATIONS IN SILICON
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[J]. PHYSICAL REVIEW, 1960, 120 (06): : 2024 - 2032
[6] NATHAN MI, 1960, B AM PHYS SOC, V5, P194
[7] THE ANISOTROPY OF THE CONDUCTIVITY OF HOT ELECTRONS AND THEIR TEMPERATURE IN GERMANIUM
PAIGE, EGS
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1960, 75 (482): : 174 - 184
[8] MILLIMETER CYCLOTRON RESONANCE IN SILICON
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ZEIGER, HJ
HELLER, GS
[J]. PHYSICAL REVIEW LETTERS, 1960, 4 (02) : 64 - 66
[9] DRIFT VELOCITY AND ANISOTROPY OF HOT ELECTRONS IN N GERMANIUM
REIK, HG
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[J]. PHYSICAL REVIEW, 1962, 126 (05): : 1737 - &
[10] DISTRIBUTION FUNCTIONS FOR HOT ELECTRONS IN MANY-VALLEY SEMICONDUCTORS
REIK, HG
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[J]. PHYSICAL REVIEW, 1961, 124 (03): : 777 - &