IMPURITY AND LATTICE SCATTERING PARAMETERS AS DETERMINED FROM HALL AND MOBILITY ANALYSIS IN N-TYPE SILICON

被引：165

作者：

NORTON, P ^{[1
]}

BRAGGINS, T ^{[1
]}

LEVINSTEIN, H ^{[1
]}

机构：

[1] SYRACUSE UNIV, DEPT PHYS, SYRACUSE, NY 13210 USA

来源：

关键词：

D O I：

10.1103/PhysRevB.8.5632

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5632 / 5653

页数：22

共 99 条

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