INTERVALLEY SCATTERING MECHANISM IN SILICON

被引：7

作者：

BASU, PK

NAG, BR

机构：

来源：

PHYSICAL REVIEW B | 1972年 / 5卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.5.1633

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1633 / &

共 9 条

[1] PIEZORESISTANCE AND PIEZO-HALL-EFFECT IN N-TYPE SILICON
AUBREY, JE
GUBLER, W
HENNINGSEN, T
KOENIG, SH
[J]. PHYSICAL REVIEW, 1963, 130 (05): : 1667 - +
[2] LATTICE-SCATTERING OHMIC MOBILITY OF ELECTRONS IN SILICON
COSTATO, M
REGGIANI, L
[J]. PHYSICA STATUS SOLIDI, 1970, 38 (02): : 665 - &
[3] 2-PHONON INDIRECT TRANSITIONS AND LATTICE SCATTERING IN SI
DUMKE, WP
[J]. PHYSICAL REVIEW, 1960, 118 (04): : 938 - 939
[4] SHAPES OF 2-PHONON RECOMBINATION PEAKS IN SILICON
FOLLAND, NO
[J]. PHYSICAL REVIEW B, 1970, 1 (04): : 1648 - &
[5] TRANSPORT AND DEFORMATION-POTENTIAL THEORY FOR MANY-VALLEY SEMICONDUCTORS WITH ANISOTROPIC SCATTERING
HERRING, C
VOGT, E
[J]. PHYSICAL REVIEW, 1956, 101 (03): : 944 - 961
[6] SCATTERING OF CONDUCTION ELECTRONS BY LATTICE VIBRATIONS IN SILICON
LONG, D
[J]. PHYSICAL REVIEW, 1960, 120 (06): : 2024 - 2032
[7] SCATTERING ANISOTROPIES IN N-TYPE SILICON
LONG, D
MYERS, J
[J]. PHYSICAL REVIEW, 1960, 120 (01): : 39 - 44
[8] EVIDENCE OF INTERVALLEY SCATTERING OF ELECTRONS IN EXTRINSIC PHOTOCONDUCTIVITY OF N-TYPE SILICON
ONTON, A
[J]. PHYSICAL REVIEW LETTERS, 1969, 22 (07) : 288 - &
[9] STRATTON R, 1960, SOLID STATE PHYS, V1, P343