SOME THEORETICAL CONSIDERATIONS RELATING TO SWITCHING AND REMANENCE IN FERROELECTRIC/PHOTOCONDUCTOR MEMORY DEVICES

被引：8

作者：

MEHTA, RR

机构：

来源：

关键词：

D O I：

10.1080/00150197208241514

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5 / &

共 26 条

[1]

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[2]

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[3]

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[4]

Fatuzzo E., 1967, FERROELECTRICITY

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DEAL, BE ;

SNOW, EH ;

SAH, CT .

[6] A FERROELECTRIC FIELD EFFECT DEVICE [J].

HEYMAN, PM ;

HEILMEIER, GH .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (06) :842-+

[7]

JACOBS JT, 1971, FERROELECTR, V3

[8] STORAGE OF HOLOGRAMS IN A FERROELECTRIC-PHOTOCONDUCTOR DEVICE [J].

KENEMAN, SA ;

TAYLOR, GW ;

MILLER, A ;

FONGER, WH .

[9]

LANDAUER R, PRIVATE COMMUNICATIO

[10]

LUKE TE, 1969, IEEE T ELECTRON DEVI, VED16