DEPENDENCES OF RESISTIVITY AND SWITCHING ON COMPOSITION IN CHALCOGENIDE GLASSES

被引:6
作者
SHIMAKAWA, K
INAGAKI, Y
NITTA, S
ARIZUMI, T
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D O I
10.1143/JJAP.10.956
中图分类号
O59 [应用物理学];
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页码:956 / +
页数:1
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[2]  
Iizima S., 1970, Solid State Communications, V8, P153, DOI 10.1016/0038-1098(70)90068-2
[3]   MEMORY EXCHANGE IN AMORPHOUS SEMICONDUCTORS [J].
KIKUCHI, M ;
IIZIMA, S .
APPLIED PHYSICS LETTERS, 1969, 15 (10) :323-&
[4]   REVERSIBLE ELECTRICAL SWITCHING PHENOMENA IN DISORDERED STRUCTURES [J].
OVSHINSKY, SR .
PHYSICAL REVIEW LETTERS, 1968, 21 (20) :1450-+
[5]   TEMPERATURE DEPENDENCE OF SWITCHING PHENOMENA IN TE-SE-GE GLASS [J].
SHIMAKAWA, K ;
NITTA, S ;
INAGAKI, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (03) :391-+
[6]   THERMAL EFFECT ON SWITCHING PHENOMENON IN CHALCOGENIDE AMORPHOUS SEMICONDUCTORS [J].
TANAKA, K ;
IIZIMA, S ;
SUGI, M ;
OKADA, Y ;
KIKUCHI, M .
SOLID STATE COMMUNICATIONS, 1970, 8 (06) :387-&