NEW METALORGANIC GALLIUM PRECURSORS FOR THE GROWTH OF GAAS AND ALGAAS BY CBE

被引：17

作者：

JONES, AC ^{[1
]}

LANE, PA ^{[1
]}

MARTIN, T ^{[1
]}

FREER, RW ^{[1
]}

CALCOTT, PDJ ^{[1
]}

HOULTON, MR ^{[1
]}

WHITEHOUSE, CR ^{[1
]}

机构：

[1] RSRE,DRA ELECTR DIV,GREAT MALVERN WR14 3PS,WORCS,ENGLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 124卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(92)90441-K

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The use of triethylgallium (TEGa) for the CBE growth of GaAs and AlGaAs leads -to, very significant reductions in unintentional carbon incorporation compared to corresponding layers grown using trimethylgallium (TMGa). However, in a continuing effort to generate even further reductions in impurity levels, the present paper provides the first reported comparison of the tri-isopropylgallium (TIPGa) and tri-tertiarybutylgallium (TTBGa) precursors for CBE growth applications. The use of TTBGa is found to lead to unacceptably low GaAs growth rates, an effect which is attributed to a steric influence on the chemisorption process. In contrast, the TIPGa-grown GaAs layers exhibit very important improvements in electrical and optical properties compared to corresponding TEGa-grown material. Results of initial AlGaAs growth experiments performed using TIPGa are also presented.

引用

页码：81 / 87

页数：7